gate oxide

См. также в других словарях:

• Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… …   Wikipedia

• gate oxide — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m …   Radioelektronikos terminų žodynas

• gate-oxide defect — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m …   Radioelektronikos terminų žodynas

• gate-oxide integrity — užtūros oksido vientisumas statusas T sritis radioelektronika atitikmenys: angl. gate oxide integrity vok. Gateoxidintegrität, f rus. целостность подзатворного оксида, f pranc. intégrité d oxyde de grille, f …   Radioelektronikos terminų žodynas

• Time-dependent gate oxide breakdown — (or time dependent dielectric breakdown) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong… …   Wikipedia

• Gate-Oxid — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m …   Radioelektronikos terminų žodynas

• Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… …   Wikipedia

• Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… …   Wikipedia

• Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because …   Wikipedia

• Logic gate — A logic gate is an idealized or physical device implementing a Boolean function, that is, it performs a logical operation on one or more logic inputs and produces a single logic output. Depending on the context, the term may refer to an ideal… …   Wikipedia

• Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia